WPMD3002 dual p-channel, -30v, -4.9a, power mosfet descriptions the WPMD3002 is the dual p-channel logic mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. features z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sop-8 l package design applications z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter sop-8 l v ds (v) rds(on) (
) 0.049@ v gs =-10v -30 0.070@ v gs =-4.5v pin configuration (top view) wpm3002 yyww wpm3002 = device code yy = year ww = week marking order information device package shipping WPMD3002-8/tr sop-8l 2500/reel&tape 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds -30 gate-source voltage v gs 20 v t a =25c -4.9 -3.8 continuous drain current a t a =70c i d -3.9 -3.0 a t a =25c 1.9 1.1 maximum power dissipation a t a =70c p d 1.2 0.7 w t a =25c -4.5 -3.6 continuous drain current b t a =70c i d -3.6 -2.9 a t a =25c 1.6 1.0 maximum power dissipation b t a =70c p d 1.0 0.6 w pulsed drain current c i dm -30 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings single operation parameter symbol typical maximum unit t ? 10 s 56 65 junction-to-ambient thermal resistance a steady state r ja 87 105 t ? 10 s 64 76 junction-to-ambient thermal resistance b steady state r ja 96 115 junction-to-case thermal resistance steady state r jc 32 40 c/w dual operation t ? 10 s 61 70 junction-to-ambient thermal resistance a steady state r ja 92 112 t ? 10 s 69 82 junction-to-ambient thermal resistance b steady state r ja 102 120 junction-to-case thermal resistance steady state r jc 36 45 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. WPMD3002 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = -250ua -30 v zero gate voltage drain current i dss v ds = -24 v, v gs = 0v -1 ua gate-to-source leakage current i gss v ds = 0 v, v gs = 20v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = -250ua -1.5 -1.9 -2.5 v v gs = -10v, i d = -4.9a v gs = -10v, i d = -3.0a v gs = -4.5v, i d = -4.0a m ? drain-to-source on-resistance r ds(on) v gs = -4.5v, i d = -3.0a forward transconductance g fs v ds = -15 v, i d = -3.0a 5.0 s charges, capacitances and gate resistance input capacitance c iss 670 output capacitance c oss 75 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = -15 v 62 pf total gate charge q g(tot) 14.0 threshold gate charge q g(th) 1.31 gate-to-source charge q gs 1.80 gate-to-drain charge q gd v gs = -10 v, v ds = -15 v, i d = -4.9 a 1.60 nc switching characteristics turn-on delay time t d(on) 6.8 rise time t r 3.2 turn-off delay time t d(off) 25.2 fall time t f v gs = -10 v, v ds = -15v, r l =5.0 ? , r g =15 ? 4.4 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = -1.0a -0.55 -0.78 -1.50 v 49 60 49 60 70 90 70 90 WPMD3002 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) o output characteristics output characteristics on-resistance vs. drain current on-resistance vs. drain current on-resistance vs. junction temperature on-resistance vs. junction temperature transfer characteristics transfer characteristics on-resistance vs. gate-to-source voltage on-resistance vs. gate-to-source voltage threshold voltage vs. temperature threshold voltage vs. temperature c, unless otherwise noted) 0123456 0 3 6 9 12 15 t=125 0 c t=-50 0 c t=25 0 c v ds = -5v -i ds - drain current (a) -v gs - gate to drain voltage (v) 0123456 0 4 8 12 16 20 v gs = -10v v gs = -4.5v v gs = -4.0v 2468101214 0 50 100 150 200 v gs = -10v v gs = -4.5v r ds(on) - on-resistance (m : ) -i ds -drain to source current (a) 2345678910 20 40 60 80 100 120 140 i ds =-3a i ds = -4.9a r ds(on) - on-resistance (m : ) -v gs -gate to source voltage(v) -50 0 100 150 20 30 40 50 60 70 80 50 v gs = -10v i ds = -4.9a r ds(on) - on-resistance (m : ) temperature ( 0 c) -25 0 25 50 75 100 125 150 1.2 1.4 1.6 1.8 2.0 2.2 2.4 i ds = -250ua -v gs(th) - threshold voltage (v) temperature ( 0 c) v gs = -3.0v -i ds _drain to source current (a) -v ds _drain to source voltage (v) WPMD3002 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance single pulse power 0.3 0.4 0.5 0.6 0.7 0.8 0.9 200 400 600 800 1000 body diode forward voltage safe operating power t=25 0 c t=150 0 c -i sd - source to drain current (a) -v sd - source to drain voltage(v) 0 4 8 121620 0 200 400 600 800 1000 crss cout cin c-capacitance (pf) -v ds - drain to source voltage (v) v gs =0v f=1mhz normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 87 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) 100 p s 10ms 1ms 0.1s 1s 10s d c r ds(on) limited t j(max) =150c t a =25c 10 p s 0 30 50 10 20 power (w) time (s) 40 1 100 600 10 10 -1 10 -2 10 -3 WPMD3002 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sop-8 l dimensions in millimeter symbol min. typ. max. a 1.47 1.60 1.73 a1 0.10 0.25 a2 1.45 b 0.33 0.41 0.51 c 0.19 0.20 0.25 d 4.80 4.85 4.95 e 5.80 6.00 6.20 e1 3.80 3.90 4.00 e 1.27 l 0.38 0.71 1.27 \ 0.076 ? 0 e 8 e WPMD3002 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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